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MicroData - Transistors - Bipolar - 2N5551

 
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    2N5551

    TO-92

    NPN high-voltage transistor (Uce=160V, Ic=0.3A, P=625mW).

    VCBO collector-base voltage /open emitter/ = 180 V
    VCEO collector-emitter voltage /open base/ = 160 V
    VEBO emitter-base voltage open collector - 6 V
    IC collector current (DC) - 300 mA
    ICM peak collector current - 600 mA
    IBM peak base current - 100 mA
    Ptot total power dissipation Tamb Ј 25 °C - 630 mW
    B=80-250@I=10mA
    f>100MHz
    -55 to +150C

    1 emitter
    2 base
    3 collector

    View documentation
    to 2N5551

    Download documentation
    to 2N5551


    See also:

  • 2N5550

  • NPN high-voltage transistor (Uce=140V, Ic=0.3A, P=625mW).

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